2sk3541 transistor rev.b 1/3 2.5v drive nch mos fet 2sk3541 z structure silicon n-channel mosfet z applications interfacing, switching (30v, 100ma) z features 1) low on-resistance. 2) fast switching speed. 3) low voltage drive (2.5v) makes this device ideal for portable equipment. 4) drive circuits can be simple. 5) parallel use is easy. z external dimensions (unit : mm) (1)gate (2)source (3)drain vmt3 (3) 0.32 0.8 1.2 0.13 0.5 0.22 0.4 0.4 1.2 0.8 0.2 0.2 ( 2 ) ( 1 ) abbreviated symbol : kn z packaging specifications t2l 8000 2sk3541 type package code basic ordering unit (pieces) taping z absolute maximum ratings (ta=25 c) parameter drain-source voltage gate-source voltage drain current total power dissipation channel temperature storage temperature v dss v gss p d ? 2 tch 30 v v ma mw c 20 100 i d i dp ? 1 continuous pulsed ma 400 150 150 tstg c ?55 to +150 symbol limits unit ?1 pw10s, duty cycle1% ?2 with each pin mounted on the recommended lands. z equivalent circuit drain source gate ? gate protection diode ?a pr otection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. use a protection circuit when the fixed voltages are exceeded.
2sk3541 transistor rev.b 2/3 z electrical characteristics (ta=25 c) parameter symbol i gss v (br)dss i dss v gs(th) r ds(on) r ds(on) c iss |y fs | c oss c rss min. ? 30 ? 0.8 ? ? 20 ? ? ? ? ? ? 5 13 ? 9 4 1 ? 1.0 1.5 8 ? 713 ? ? ? ? av gs = 20v, v ds =0v i d =10 a, v gs =0v v ds =30v, v gs =0v v ds =3v, i d =100 a i d =10ma, v gs =4v i d =1ma, v gs =2.5v v ds =5v i d =10ma, v ds =3v v gs =0v f=1mhz v a v ? ? pf ms pf pf t d(on) ? 15 ? i d =10ma, v dd 5v ns t r ? 35 ? v gs =5v ns t d(off) ? 80 ? r l =500? ns t f ? 80 ? r g =10? ns typ. max. unit conditions gate-source leakage drain-source breakdown voltage zero gate voltage drain curren t gate threshold voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time static drain-source on-state resistance z electrical characteristic curves 012345 0 0.05 0.1 0.15 drain current : i d (a) drain-source voltage : v ds (v) 3v 3.5v 2.5v v gs = 1.5v 4v 2v fig.1 typical output characteristics ta=25c pulsed 04 0.1m 100m drain current : i d (a) gate-source voltage : v gs (v) 1 10m 3 2 1m 0.2m 0.5m 2m 5m 50m 20m 200m ta=125c 75c 25c ?25c v ds =3v pulsed fig.2 typical transfer characteristics ? 50 0 0 1 1.5 2 gate threshold voltage : v gs(th) (v) channel temperature : tch (c) 0.5 ? 25 25 50 75 100 125 150 v ds =3v i d =0.1ma pulsed fig.3 gate threshold voltage vs. channel temperature 0.001 1 2 50 static drain-source on-state resistance : r ds(on) (?) drain current : i d (a) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 ta=125c 75c 25c ?25c v gs =4v pulsed fig.4 static drain-source on-state resistance vs. drain current () 0.001 1 2 50 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 static drain-source on-state resistance : r ds(on) (?) v gs =2.5v pulsed drain current : i d (a) ta=125c 75c 25c ?25c fig.5 static drain-source on-state resistance vs. drain current (?) 0 5 10 15 20 0 5 10 15 gate-source voltage : v gs (v) i d =0.1a static drain-source on-state resistance : r ds(on) (?) ta=25c pulsed i d =0.05a fig.6 static drain-source on-state resistance vs. gate-source voltage
2sk3541 transistor rev.b 3/3 ? 50 0 25 150 0 3 6 9 channel temperature : tch (c) ?25 50 75 100 125 2 1 4 5 7 8 v gs =4v pulsed i d =100ma i d =50ma static drain-source on-state resistance : r ds(on) (?) fig.7 static drain-source on-state resistance vs. channel temperature 0.0001 0.001 0.01 0.02 0.5 forward transfer admittance : |yfs| (s) drain current : i d (a) 0.005 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.05 0.1 0.2 0.1 0.2 0.5 0.002 ta=?25c 25c 75c 125c v ds =3v pulsed fig.8 forward transfer admittance vs. drain current 200m reverse drain current : i dr (a) source-drain voltage : v sd (v) 1.5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m v gs =0v pulsed ta=125c 75c 25c ?25c fig.9 reverse drain current vs. source-drain voltage () 200m reverse drain current : i dr (a) source-drain voltage : v sd (v) 1.5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m ta=25c pulsed v gs =4v 0v fig.10 reverse drain current vs. source-drain voltage (?) 0.1 1 2 50 capacitance : c (pf) drain-source voltage : v ds (v) 0.5 0.2 0.5 1 2 5 10 20 50 5 10 20 c iss c oss c rss ta =25c f=1mh z v gs =0v fig.11 typical capacitance vs. drain-source voltage 0.1 10 20 500 swithing time : t (ns) drain current : i d (ma) 5 0.2 0.5 1 2 5 10 20 50 50 100 200 1000 2 100 ta =25c v dd =5v v gs =5v r g =10? pulsed t d(off) t r t d(on) t f fig.12 switching characteristics (see figures 13 and 14 for the measurement circuit and resultant waveforms) z switching characteristics measurement circuit fig.13 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd 90% 50% 10% 90% 10% 50% pulse width 10% v gs v ds 90% t f t off t d (off) t r t on t d (on) fig.14 switching time waveforms
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